anx_III__table

X.A.I.001 | Electronic devices and components. a. “Microprocessor microcircuits”, “microcomputer microcircuits”, and microcontroller microcircuits having any of the following: 1. A performance speed of 5 GigaFLOPS or more and an arithmetic logic unit with an access width of 32 bit or more; 2. A clock frequency rate exceeding 25 MHz; or 3. More than one data or instruction bus or serial communication port that provides a direct external interconnection between parallel “microprocessor microcircuits” with a transfer rate of 2,5 Mbyte/s; b. Storage integrated circuits, as follows: 1. Electrically erasable programmable read-only memories (EEPROMs) with a storage capacity; a. Exceeding 16 Mbits per package for flash memory types; or b. Exceeding either of the following limits for all other EEPROM types: 1. Exceeding 1 Mbit per package; or 2. Exceeding 256 kbit per package and a maximum access time of less than 80 ns; 2. Static random access memories (SRAMs) with a storage capacity: a. Exceeding 1 Mbit per package; or b. Exceeding 256 kbit per package and a maximum access time of less than 25 ns; c. Analogue-to-digital converters having any of the following: 1. A resolution of 8 bit or more, but less than 12 bit, with an output rate greater than 200 Mega Samples Per Second (MSPS); 2. A resolution of 12 bit with an output rate greater than 105 Mega Samples per Second (MSPS); 3. A resolution of more than 12 bit but equal to or less than 14 bit with an output rate greater than 10 Mega Samples per Second (MSPS); or 4. A resolution of more than 14 bit with an output rate greater than 2,5 Mega Samples Per Second (MSPS); d. Field programmable logic devices having a maximum number of single-ended digital input/outputs between 200 and 700; e. Fast Fourier Transform (FFT) processors having a rated execution time for a 1 024 point complex FFT of less than 1 ms; f. Custom integrated circuits for which the function is unknown, or the control status of the equipment in which the integrated circuits will be used is unknown to the manufacturer, having any of the following: 1. More than 144 terminals; or 2. A typical basic propagation delay time of less than 0,4 ns; g. Traveling-wave “vacuum electronic devices”, pulsed or continuous wave, as follows: 1. Coupled cavity devices, or derivatives thereof; 2. Devices based on helix, folded waveguide, or serpentine waveguide circuits, or derivatives thereof, having any of the following: a. An “instantaneous bandwidth” of half an octave or more and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,2; or b. An “instantaneous bandwidth” of less than half an octave; and average power (expressed in kW) times frequency (expressed in GHz) of more than 0,4; h. Flexible waveguides designed for use at frequencies exceeding 40 GHz; i. Surface acoustic wave and surface skimming (shallow bulk) acoustic wave devices, having either of the following: 1. A carrier frequency exceeding 1 GHz; or 2. A carrier frequency of 1 GHz or less; and a. A “frequency side-lobe rejection” exceeding 55 dB; b. A product of the maximum delay time and bandwidth (time in μs and bandwidth in MHz) of more than 100; or c. A dispersive delay of more than 10 μs; Technical Note: For the purpose of X.A.I.001.i “Frequency side-lobe rejection” is the maximum rejection value specified in data sheet. j. “Cells” as follows: 1. “Primary cells” having an “energy density” of 550 Wh/kg or less at 293 K (20 oC); 2. “Secondary cells” having an “energy density” of 350 Wh/kg or less at 293 K (20 oC); Note: X.A.I.001.j does not control batteries, including single cell batteries. Technical Notes: 1. For the purpose of X.A.I.001.j energy density (Wh/kg) is calculated from the nominal voltage multiplied by the nominal capacity in ampere-hours (Ah) divided by the mass in kilograms. If the nominal capacity is not stated, energy density is calculated from the nominal voltage squared then multiplied by the discharge duration in hours divided by the discharge load in Ohms and the mass in kilograms. 2. For the purpose of X.A.I.001.j, a “cell” is defined as an electrochemical device, which has positive and negative electrodes, and electrolyte, and is a source of electrical energy. It is the basic building block of a battery. 3. For the purpose of X.A.I.001.j.1, a “primary cell” is a “cell” that is not designed to be charged by any other source. 4. For the purpose of X.A.I.001.j.2, a “secondary cell” is a “cell” that is designed to be charged by an external electrical source. k. “Superconductive” electromagnets or solenoids specially designed to be fully charged or discharged in less than one minute, having all of the following: Note: X.A.I.001.k does not control “superconductive” electromagnets or solenoids designed for Magnetic Resonance Imaging (MRI) medical equipment. 1. Maximum energy delivered during the discharge divided by the duration of the discharge of more than 500 kJ per minute; 2. Inner diameter of the current carrying windings of more than 250 mm; and 3. Rated for a magnetic induction of more than 8T or “overall current density” in the winding of more than 300 A/mm2; l. Circuits or systems for electromagnetic energy storage, containing components manufactured from “superconductive” materials specially designed for operation at temperatures below the “critical temperature” of at least one of their “superconductive” constituents, having all of the following: 1. Resonant operating frequencies exceeding 1 MHz; 2. A stored energy density of 1 MJ/m3 or more; and 3. A discharge time of less than 1 ms; m. Hydrogen/hydrogen-isotope thyratrons of ceramic-metal construction and rate for a peak current of 500 A or more; n. Ceramic frequency filters; o. Solar cells, cell-interconnect-coverglass (CIC) assemblies, solar panels, and solar arrays, which are “space qualified” and not controlled by 3A001.e.4 (1); p. Cermet trimmers.

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Source: EUR-Lex (Cellar) · retrieved 2026-10-15 · Text as adopted (Official Journal); later amendments are not incorporated in this text.